Photo Nano-Imprint Lithography (P-NIL)

UV or photo nano-imprint lithography (UV-NIL or P-NIL) is a versatile method for low-cost nano-scale device fabrication.   A resin is coated on a substrate, a stamper with patterns is pressed on, and the resin is cured by UV light as illustrated below.  The method gives embossed features on plastic, glass, silicon, or metal for many applications including optical storage, diffractive optical elements (DOE), displays, semi-conductor devices.  ACW provides low viscosity, high hardness, high Tg, and optically clear resins for accurate nano-scale replications.  And ACWs stable of P-NIL resins now includes very high RI (1.70 to 1.96 at 589 nm) LuxNIL® resins for AR/VR/MR applications.

ACW Featured P-NIL Products    Data
P-NIL resins Multi-purpose for spin coat process
BD-119 Nano/micro structures, RI589nm = 1.5165, Tg 131 °C    TDS
BD-218 Nano/micro structures, RI589nm = 1.506, Tg 120 °C    TDS
BD-400 Nano/micro structures, RI589nm = 1.510, Tg 145 °C    TDS
IP-158 Nano/micro structures, RI589nm = 1.584, Tg 70 °C    TDS
IP-159B Nano/micro structures, RI589nm = 1.589, Tg 75 °C    TDS
PR-1600-CA Nano/micro structures, RI589nm = 1.600, Tg 89 °C    TDS
PR-1612 Nano/micro structures, RI589nm = 1.612, Tg 60 °C    TDS
PR-1614 Nano/micro structures, RI589nm = 1.614, Tg 76 °C    TDS
Lens resins wafer-optics lenses, micro-lens arrays
L2002-C42 Microlens arrays, hybrid lens, RI589nm = 1.515, Tg 150 °C, η = 2,800 cps    TDS
L2002-C56 Microlens arrays, hybrid lens, RI589nm = 1.513, Tg 145 °C, η  = 1,200 cps    TDS
L2007 Microlens arrays, hybrid lens, RI589nm = 1.567, Tg 109 °C    TDS
L2061-B Microlens arrays, hybrid lens, RI589nm = 1.602, Tg 130 °C    TDS
Very High RI resins Augmented and Virtual Reality, Diffractive Optical Elements, LuxNIL®
P270 RI589nm = 1.70    TDS
P276 RI589nm = 1.81    TDS
P285 RI589nm = 1.90    TDS
P289 RI589nm = 1.96    TDS

PDF brochure for high RI Resins for Microimprint

PDF brochure for LuxNIL® Resins; very high RI for Nanoimprint Lithography